IRF8915PBF

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Overview of IRF8915PBF

Part NumberIRF8915PBF
ManufacturerInternational Rectifier
DescriptionHEXFET POWER MOSFET
DatasheetsDownload IRF8915PBF Datasheet PDFPDF Icon
Price for IRF8915PBF

Specification of IRF8915PBF

Status
Obsolete
Series
HEXFET®
Package
Tube
Supplier
Rochester Electronics, LLC
Technology
MOSFET (Metal Oxide)
Configuration
2 N-Channel (Dual)
FET Feature
Logic Level Gate
Drain to Source Voltage (Vdss)
20V
Current - Continuous Drain (Id) @ 25C
8.9A
Rds On (Max) @ Id, Vgs
18.3mOhm @ 8.9A, 10V
Vgs(th) (Max) @ Id
2.5V @ 250A
Gate Charge (Qg) (Max) @ Vgs
7.4nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds
540pF @ 10V
Power - Max
2W
Operating Temperature
-55C ~ 150C (TJ)
Mounting Type
Surface Mount
Package / Case
8-SOIC (0.154", 3.90mm Width)
Supplier Device Package
8-SO

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