IRF9952

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Overview of IRF9952

Part NumberIRF9952
ManufacturerInfineon Technologies
DescriptionMOSFET N/P-CH 30V 8-SOIC
DatasheetsDownload IRF9952 Datasheet PDFPDF Icon
Price for IRF9952

Specification of IRF9952

Status
Obsolete
Series
HEXFET®
Package
Tube
Supplier
Infineon Technologies
Technology
MOSFET (Metal Oxide)
Configuration
N and P-Channel
FET Feature
Logic Level Gate
Drain to Source Voltage (Vdss)
30V
Current - Continuous Drain (Id) @ 25C
3.5A, 2.3A
Rds On (Max) @ Id, Vgs
100mOhm @ 2.2A, 10V
Vgs(th) (Max) @ Id
1V @ 250A
Gate Charge (Qg) (Max) @ Vgs
14nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds
190pF @ 15V
Power - Max
2W
Operating Temperature
-55C ~ 150C (TJ)
Mounting Type
Surface Mount
Package / Case
8-SOIC (0.154", 3.90mm Width)
Supplier Device Package
8-SO

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