IRF9Z24NL

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Overview of IRF9Z24NL

Part NumberIRF9Z24NL
ManufacturerInfineon Technologies
DescriptionMOSFET P-CH 55V 12A TO262
DatasheetsDownload IRF9Z24NL Datasheet PDFPDF Icon
Price for IRF9Z24NL

Specification of IRF9Z24NL

Status
Obsolete
Series
HEXFET®
Package
Tube
Supplier
Infineon Technologies
FET Type
P-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
55 V
Current - Continuous Drain (Id) @ 25C
12A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
175mOhm @ 7.2A, 10V
Vgs(th) (Max) @ Id
4V @ 250A
Gate Charge (Qg) (Max) @ Vgs
19 nC @ 10 V
Vgs (Max)
20V
Input Capacitance (Ciss) (Max) @ Vds
350 pF @ 25 V
FET Feature
-
Power Dissipation (Max)
3.8W (Ta), 45W (Tc)
Operating Temperature
-55C ~ 175C (TJ)
Mounting Type
Through Hole
Supplier Device Package
TO-262
Package / Case
TO-262-3 Long Leads, IPak, TO-262AA

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