IRFAC30

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Overview of IRFAC30

Part NumberIRFAC30
ManufacturerInternational Rectifier
DescriptionN-CHANNEL HERMETIC MOS HEXFET
DatasheetsDownload IRFAC30 Datasheet PDFPDF Icon
Price for IRFAC30

Specification of IRFAC30

Status
Active
Series
HEXFET®
Package
Bulk
Supplier
Rochester Electronics, LLC
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
600 V
Current - Continuous Drain (Id) @ 25C
3.6A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
2.5Ohm @ 3.6A, 10V
Vgs(th) (Max) @ Id
4V @ 250A
Gate Charge (Qg) (Max) @ Vgs
38 nC @ 10 V
Vgs (Max)
20V
Input Capacitance (Ciss) (Max) @ Vds
630 pF @ 25 V
FET Feature
-
Power Dissipation (Max)
75W (Tc)
Operating Temperature
-55C ~ 150C (TJ)
Mounting Type
Through Hole
Supplier Device Package
TO-204AA (TO-3)
Package / Case
TO-204AA, TO-3

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