IRFB17N20D

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Overview of IRFB17N20D

Part NumberIRFB17N20D
ManufacturerInfineon Technologies
DescriptionMOSFET N-CH 200V 16A TO220AB
DatasheetsDownload IRFB17N20D Datasheet PDFPDF Icon
Price for IRFB17N20D

Specification of IRFB17N20D

Status
Obsolete
Series
HEXFET®
Package
Tube
Supplier
Infineon Technologies
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
200 V
Current - Continuous Drain (Id) @ 25C
16A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
170mOhm @ 9.8A, 10V
Vgs(th) (Max) @ Id
5.5V @ 250A
Gate Charge (Qg) (Max) @ Vgs
50 nC @ 10 V
Vgs (Max)
30V
Input Capacitance (Ciss) (Max) @ Vds
1100 pF @ 25 V
FET Feature
-
Power Dissipation (Max)
3.8W (Ta), 140W (Tc)
Operating Temperature
-55C ~ 175C (TJ)
Mounting Type
Through Hole
Supplier Device Package
TO-220AB
Package / Case
TO-220-3

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