IRFB3307PBF

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Overview of IRFB3307PBF

Part NumberIRFB3307PBF
ManufacturerInfineon Technologies
DescriptionMOSFET N-CH 75V 130A TO220AB
DatasheetsDownload IRFB3307PBF Datasheet PDFPDF Icon
Price for IRFB3307PBF

Specification of IRFB3307PBF

Status
Active
Series
HEXFET®
Package
Tube
Supplier
Infineon Technologies
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
75 V
Current - Continuous Drain (Id) @ 25C
130A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
6.3mOhm @ 75A, 10V
Vgs(th) (Max) @ Id
4V @ 150A
Gate Charge (Qg) (Max) @ Vgs
180 nC @ 10 V
Vgs (Max)
20V
Input Capacitance (Ciss) (Max) @ Vds
5150 pF @ 50 V
FET Feature
-
Power Dissipation (Max)
200W (Tc)
Operating Temperature
-55C ~ 175C (TJ)
Mounting Type
Through Hole
Supplier Device Package
TO-220AB
Package / Case
TO-220-3

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