IRFB59N10DPBF

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Overview of IRFB59N10DPBF

Part NumberIRFB59N10DPBF
ManufacturerInternational Rectifier
DescriptionSMPS HEXFET POWER MOSFET
DatasheetsDownload IRFB59N10DPBF Datasheet PDFPDF Icon
Price for IRFB59N10DPBF

Specification of IRFB59N10DPBF

Status
Active
Series
HEXFET®
Package
Bulk
Supplier
Rochester Electronics, LLC
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
100 V
Current - Continuous Drain (Id) @ 25C
59A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
25mOhm @ 35.4A, 10V
Vgs(th) (Max) @ Id
5.5V @ 250A
Gate Charge (Qg) (Max) @ Vgs
114 nC @ 10 V
Vgs (Max)
30V
Input Capacitance (Ciss) (Max) @ Vds
2450 pF @ 25 V
FET Feature
-
Power Dissipation (Max)
3.8W (Ta), 200W (Tc)
Operating Temperature
-55C ~ 175C (TJ)
Mounting Type
Through Hole
Supplier Device Package
TO-220AB
Package / Case
TO-220-3

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