IRFBC20L

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Overview of IRFBC20L

Part NumberIRFBC20L
ManufacturerVishay / Siliconix
DescriptionMOSFET N-CH 600V 2.2A I2PAK
Price for IRFBC20L

Specification of IRFBC20L

Status
Obsolete
Package
Tube
Supplier
Vishay Siliconix
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
600 V
Current - Continuous Drain (Id) @ 25C
2.2A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
4.4Ohm @ 1.3A, 10V
Vgs(th) (Max) @ Id
4V @ 250A
Gate Charge (Qg) (Max) @ Vgs
18 nC @ 10 V
Vgs (Max)
20V
Input Capacitance (Ciss) (Max) @ Vds
350 pF @ 25 V
FET Feature
-
Power Dissipation (Max)
3.1W (Ta), 50W (Tc)
Operating Temperature
-55C ~ 150C (TJ)
Mounting Type
Through Hole
Supplier Device Package
I2PAK
Package / Case
TO-262-3 Long Leads, IPak, TO-262AA

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