IRFBF20S

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Overview of IRFBF20S

Part NumberIRFBF20S
ManufacturerVishay / Siliconix
DescriptionMOSFET N-CH 900V 1.7A D2PAK
DatasheetsDownload IRFBF20S Datasheet PDFPDF Icon
Price for IRFBF20S

Specification of IRFBF20S

Status
Obsolete
Package
Tube
Supplier
Vishay Siliconix
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
900 V
Current - Continuous Drain (Id) @ 25C
1.7A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
8Ohm @ 1A, 10V
Vgs(th) (Max) @ Id
4V @ 250A
Gate Charge (Qg) (Max) @ Vgs
38 nC @ 10 V
Vgs (Max)
20V
Input Capacitance (Ciss) (Max) @ Vds
490 pF @ 25 V
FET Feature
-
Power Dissipation (Max)
3.1W (Ta), 54W (Tc)
Operating Temperature
-55C ~ 150C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
DPAK (TO-263)
Package / Case
TO-263-3, DPak (2 Leads + Tab), TO-263AB

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