IRFD9210PBF

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Overview of IRFD9210PBF

Part NumberIRFD9210PBF
ManufacturerVishay / Siliconix
DescriptionMOSFET P-CH 200V 400MA 4DIP
DatasheetsDownload IRFD9210PBF Datasheet PDFPDF Icon
Price for IRFD9210PBF

Specification of IRFD9210PBF

Status
Active
Package
Bulk
Supplier
Vishay Siliconix
FET Type
P-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
200 V
Current - Continuous Drain (Id) @ 25C
400mA (Ta)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
3Ohm @ 240mA, 10V
Vgs(th) (Max) @ Id
4V @ 250A
Gate Charge (Qg) (Max) @ Vgs
8.9 nC @ 10 V
Vgs (Max)
20V
Input Capacitance (Ciss) (Max) @ Vds
170 pF @ 25 V
FET Feature
-
Power Dissipation (Max)
1W (Ta)
Operating Temperature
-55C ~ 150C (TJ)
Mounting Type
Through Hole
Supplier Device Package
4-HVMDIP
Package / Case
4-DIP (0.300", 7.62mm)

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