IRFHE4250DTRPBF

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Overview of IRFHE4250DTRPBF

Part NumberIRFHE4250DTRPBF
ManufacturerInternational Rectifier
DescriptionHEXFET POWER MOSFET
DatasheetsDownload IRFHE4250DTRPBF Datasheet PDFPDF Icon
Price for IRFHE4250DTRPBF

Specification of IRFHE4250DTRPBF

Status
Active
Series
HEXFET®
Package
Bulk
Supplier
Rochester Electronics, LLC
Technology
MOSFET (Metal Oxide)
Configuration
2 N-Channel (Dual)
FET Feature
-
Drain to Source Voltage (Vdss)
25V
Current - Continuous Drain (Id) @ 25C
86A (Tc), 303A (Tc)
Rds On (Max) @ Id, Vgs
2.75mOhm @ 27A, 10V, 900Ohm @ 27A, 10V
Vgs(th) (Max) @ Id
2.1V @ 35A, 2.1V @ 100A
Gate Charge (Qg) (Max) @ Vgs
20nC @ 4.5V, 53nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds
1735pF @ 13V, 4765pF @ 13V
Power - Max
156W (Tc)
Operating Temperature
-55C ~ 150C (TJ)
Mounting Type
Surface Mount
Package / Case
32-PowerVFQFN
Supplier Device Package
32-PQFN (6x6)

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