IRFHM8363TRPBF

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Overview of IRFHM8363TRPBF

Part NumberIRFHM8363TRPBF
ManufacturerInfineon Technologies
DescriptionMOSFET 2N-CH 30V 11A 8PQFN
DatasheetsDownload IRFHM8363TRPBF Datasheet PDFPDF Icon
Price for IRFHM8363TRPBF

Specification of IRFHM8363TRPBF

Status
Not For New Designs
Series
HEXFET®
Package
Tape & Reel (TR),Cut Tape (CT),Digi-Reel®
Supplier
Infineon Technologies
Technology
MOSFET (Metal Oxide)
Configuration
2 N-Channel (Dual)
FET Feature
Logic Level Gate
Drain to Source Voltage (Vdss)
30V
Current - Continuous Drain (Id) @ 25C
11A
Rds On (Max) @ Id, Vgs
14.9mOhm @ 10A, 10V
Vgs(th) (Max) @ Id
2.35V @ 25A
Gate Charge (Qg) (Max) @ Vgs
15nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds
1165pF @ 10V
Power - Max
2.7W
Operating Temperature
-55C ~ 150C (TJ)
Mounting Type
Surface Mount
Package / Case
8-PowerVDFN
Supplier Device Package
8-PQFN (3.3x3.3), Power33

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