IRFIB5N65A

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Overview of IRFIB5N65A

Part NumberIRFIB5N65A
ManufacturerVishay / Siliconix
DescriptionMOSFET N-CH 650V 5.1A TO220-3
DatasheetsDownload IRFIB5N65A Datasheet PDFPDF Icon
Price for IRFIB5N65A

Specification of IRFIB5N65A

Status
Obsolete
Package
Tube
Supplier
Vishay Siliconix
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
650 V
Current - Continuous Drain (Id) @ 25C
5.1A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
930mOhm @ 3.1A, 10V
Vgs(th) (Max) @ Id
4V @ 250A
Gate Charge (Qg) (Max) @ Vgs
48 nC @ 10 V
Vgs (Max)
30V
Input Capacitance (Ciss) (Max) @ Vds
1417 pF @ 25 V
FET Feature
-
Power Dissipation (Max)
60W (Tc)
Operating Temperature
-55C ~ 150C (TJ)
Mounting Type
Through Hole
Supplier Device Package
TO-220-3
Package / Case
TO-220-3 Full Pack, Isolated Tab

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