IRFP048NPBF

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Overview of IRFP048NPBF

Part NumberIRFP048NPBF
ManufacturerInternational Rectifier
DescriptionHEXFET POWER MOSFET
DatasheetsDownload IRFP048NPBF Datasheet PDFPDF Icon
Price for IRFP048NPBF

Specification of IRFP048NPBF

Status
Active
Series
HEXFET®
Package
Bulk
Supplier
Rochester Electronics, LLC
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
55 V
Current - Continuous Drain (Id) @ 25C
64A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
16mOhm @ 37A, 10V
Vgs(th) (Max) @ Id
4V @ 250A
Gate Charge (Qg) (Max) @ Vgs
89 nC @ 10 V
Vgs (Max)
20V
Input Capacitance (Ciss) (Max) @ Vds
1900 pF @ 25 V
FET Feature
-
Power Dissipation (Max)
140W (Tc)
Operating Temperature
-55C ~ 175C (TJ)
Mounting Type
Through Hole
Supplier Device Package
TO-247AC
Package / Case
TO-247-3

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