IRFP21N60L

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Overview of IRFP21N60L

Part NumberIRFP21N60L
ManufacturerVishay / Siliconix
DescriptionMOSFET N-CH 600V 21A TO247-3
Price for IRFP21N60L

Specification of IRFP21N60L

Status
Obsolete
Package
Tube
Supplier
Vishay Siliconix
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
600 V
Current - Continuous Drain (Id) @ 25C
21A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
320mOhm @ 13A, 10V
Vgs(th) (Max) @ Id
5V @ 250A
Gate Charge (Qg) (Max) @ Vgs
150 nC @ 10 V
Vgs (Max)
30V
Input Capacitance (Ciss) (Max) @ Vds
4000 pF @ 25 V
FET Feature
-
Power Dissipation (Max)
330W (Tc)
Operating Temperature
-55C ~ 150C (TJ)
Mounting Type
Through Hole
Supplier Device Package
TO-247AC
Package / Case
TO-247-3

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