IRFP362

Image shown is a representation only. Exact specifications should be obtained from the product data sheet.

Overview of IRFP362

Part NumberIRFP362
ManufacturerHarris Corporation
DescriptionN-CHANNEL POWER MOSFET
DatasheetsDownload IRFP362 Datasheet PDFPDF Icon
Price for IRFP362

Specification of IRFP362

Status
Active
Package
Bulk
Supplier
Rochester Electronics, LLC
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
400 V
Current - Continuous Drain (Id) @ 25C
20A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
250mOhm @ 13A, 10V
Vgs(th) (Max) @ Id
4V @ 250A
Gate Charge (Qg) (Max) @ Vgs
100 nC @ 10 V
Vgs (Max)
20V
Input Capacitance (Ciss) (Max) @ Vds
4000 pF @ 25 V
FET Feature
-
Power Dissipation (Max)
250W (Tc)
Operating Temperature
-55C ~ 150C (TJ)
Mounting Type
Through Hole
Supplier Device Package
TO-247
Package / Case
TO-247-3

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