IRFP4668PBF

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Overview of IRFP4668PBF

Part NumberIRFP4668PBF
ManufacturerInfineon Technologies
DescriptionMOSFET N-CH 200V 130A TO247AC
DatasheetsDownload IRFP4668PBF Datasheet PDFPDF Icon
Price for IRFP4668PBF

Specification of IRFP4668PBF

Status
Active
Series
HEXFET®
Package
Tube
Supplier
Infineon Technologies
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
200 V
Current - Continuous Drain (Id) @ 25C
130A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
9.7mOhm @ 81A, 10V
Vgs(th) (Max) @ Id
5V @ 250A
Gate Charge (Qg) (Max) @ Vgs
241 nC @ 10 V
Vgs (Max)
30V
Input Capacitance (Ciss) (Max) @ Vds
10720 pF @ 50 V
FET Feature
-
Power Dissipation (Max)
520W (Tc)
Operating Temperature
-55C ~ 175C (TJ)
Mounting Type
Through Hole
Supplier Device Package
TO-247AC
Package / Case
TO-247-3

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