IRFR1018ETRPBF

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Overview of IRFR1018ETRPBF

Part NumberIRFR1018ETRPBF
ManufacturerInfineon Technologies
DescriptionMOSFET N-CH 60V 56A DPAK
DatasheetsDownload IRFR1018ETRPBF Datasheet PDFPDF Icon
Price for IRFR1018ETRPBF

Specification of IRFR1018ETRPBF

Status
Active
Series
HEXFET®
Package
Tape & Reel (TR),Cut Tape (CT),Digi-Reel®
Supplier
Infineon Technologies
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
60 V
Current - Continuous Drain (Id) @ 25C
56A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
8.4mOhm @ 47A, 10V
Vgs(th) (Max) @ Id
4V @ 100A
Gate Charge (Qg) (Max) @ Vgs
69 nC @ 10 V
Vgs (Max)
20V
Input Capacitance (Ciss) (Max) @ Vds
2290 pF @ 50 V
FET Feature
-
Power Dissipation (Max)
110W (Tc)
Operating Temperature
-55C ~ 175C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
D-Pak
Package / Case
TO-252-3, DPak (2 Leads + Tab), SC-63

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