IRFR2605

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Overview of IRFR2605

Part NumberIRFR2605
ManufacturerInfineon Technologies
DescriptionMOSFET N-CH 55V 19A D-PAK
DatasheetsDownload IRFR2605 Datasheet PDFPDF Icon
Price for IRFR2605

Specification of IRFR2605

Status
Obsolete
Series
HEXFET®
Package
Tube
Supplier
Infineon Technologies
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
55 V
Current - Continuous Drain (Id) @ 25C
19A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
85mOhm @ 11A, 10V
Vgs(th) (Max) @ Id
4V @ 250A
Gate Charge (Qg) (Max) @ Vgs
23 nC @ 10 V
Vgs (Max)
20V
Input Capacitance (Ciss) (Max) @ Vds
420 pF @ 25 V
FET Feature
-
Power Dissipation (Max)
50W (Tc)
Operating Temperature
-
Mounting Type
Surface Mount
Supplier Device Package
D-Pak
Package / Case
TO-252-3, DPak (2 Leads + Tab), SC-63

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