IRFS11N50ATRLP

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Overview of IRFS11N50ATRLP

Part NumberIRFS11N50ATRLP
ManufacturerVishay / Siliconix
DescriptionMOSFET N-CH 500V 11A TO263AB
DatasheetsDownload IRFS11N50ATRLP Datasheet PDFPDF Icon
Price for IRFS11N50ATRLP

Specification of IRFS11N50ATRLP

Status
Active
Package
Tape & Reel (TR),Cut Tape (CT),Digi-Reel®
Supplier
Vishay Siliconix
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
500 V
Current - Continuous Drain (Id) @ 25C
11A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
520mOhm @ 6.6A, 10V
Vgs(th) (Max) @ Id
4V @ 250A
Gate Charge (Qg) (Max) @ Vgs
52 nC @ 10 V
Vgs (Max)
30V
Input Capacitance (Ciss) (Max) @ Vds
1423 pF @ 25 V
FET Feature
-
Power Dissipation (Max)
170W (Tc)
Operating Temperature
-55C ~ 150C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
TO-263AB
Package / Case
TO-263-3, DPak (2 Leads + Tab), TO-263AB

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