IRFS4410PBF-INF

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Overview of IRFS4410PBF-INF

Part NumberIRFS4410PBF-INF
ManufacturerInfineon Technologies
DescriptionHEXFET POWER MOSFET
DatasheetsDownload IRFS4410PBF-INF Datasheet PDFPDF Icon
Price for IRFS4410PBF-INF

Specification of IRFS4410PBF-INF

Status
Active
Series
HEXFET®
Package
Bulk
Supplier
Rochester Electronics, LLC
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
100 V
Current - Continuous Drain (Id) @ 25C
88A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
-
Rds On (Max) @ Id, Vgs
10mOhm @ 58A, 10V
Vgs(th) (Max) @ Id
4V @ 150A
Gate Charge (Qg) (Max) @ Vgs
180 nC @ 10 V
Vgs (Max)
20V
Input Capacitance (Ciss) (Max) @ Vds
5150 pF @ 50 V
FET Feature
-
Power Dissipation (Max)
200W (Tc)
Operating Temperature
-55C ~ 175C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
PG-TO263-3-2
Package / Case
TO-263-3, DPak (2 Leads + Tab), TO-263AB

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