IRFS610BFP001

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Overview of IRFS610BFP001

Part NumberIRFS610BFP001
ManufacturerFairchild Semiconductor
DescriptionPOWER FIELD-EFFECT TRANSISTOR, N
DatasheetsDownload IRFS610BFP001 Datasheet PDFPDF Icon
Price for IRFS610BFP001

Specification of IRFS610BFP001

Status
Active
Package
Bulk
Supplier
Rochester Electronics, LLC
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
200 V
Current - Continuous Drain (Id) @ 25C
3.3A (Tj)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
1.5Ohm @ 1.65A, 10V
Vgs(th) (Max) @ Id
4V @ 250A
Gate Charge (Qg) (Max) @ Vgs
9.3 nC @ 10 V
Vgs (Max)
30V
Input Capacitance (Ciss) (Max) @ Vds
225 pF @ 25 V
FET Feature
-
Power Dissipation (Max)
22W (Tc)
Operating Temperature
-55C ~ 150C (TJ)
Mounting Type
Through Hole
Supplier Device Package
TO-220F
Package / Case
TO-220-3 Full Pack

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