IRFS9N60A

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Overview of IRFS9N60A

Part NumberIRFS9N60A
ManufacturerVishay / Siliconix
DescriptionMOSFET N-CH 600V 9.2A D2PAK
DatasheetsDownload IRFS9N60A Datasheet PDFPDF Icon
Price for IRFS9N60A

Specification of IRFS9N60A

Status
Obsolete
Package
Tube
Supplier
Vishay Siliconix
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
600 V
Current - Continuous Drain (Id) @ 25C
9.2A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
750mOhm @ 5.5A, 10V
Vgs(th) (Max) @ Id
4V @ 250A
Gate Charge (Qg) (Max) @ Vgs
49 nC @ 10 V
Vgs (Max)
30V
Input Capacitance (Ciss) (Max) @ Vds
1400 pF @ 25 V
FET Feature
-
Power Dissipation (Max)
170W (Tc)
Operating Temperature
-55C ~ 150C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
DPAK (TO-263)
Package / Case
TO-263-3, DPak (2 Leads + Tab), TO-263AB

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