IRFSL4115PBF

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Overview of IRFSL4115PBF

Part NumberIRFSL4115PBF
ManufacturerInfineon Technologies
DescriptionMOSFET N-CH 150V 195A TO262
DatasheetsDownload IRFSL4115PBF Datasheet PDFPDF Icon
Price for IRFSL4115PBF

Specification of IRFSL4115PBF

Status
Obsolete
Series
HEXFET®
Package
Tube
Supplier
Infineon Technologies
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
150 V
Current - Continuous Drain (Id) @ 25C
195A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
12.1mOhm @ 62A, 10V
Vgs(th) (Max) @ Id
5V @ 250A
Gate Charge (Qg) (Max) @ Vgs
120 nC @ 10 V
Vgs (Max)
20V
Input Capacitance (Ciss) (Max) @ Vds
5270 pF @ 50 V
FET Feature
-
Power Dissipation (Max)
375W (Tc)
Operating Temperature
-55C ~ 175C (TJ)
Mounting Type
Through Hole
Supplier Device Package
TO-262
Package / Case
TO-262-3 Long Leads, IPak, TO-262AA

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