IRFU1N60A

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Overview of IRFU1N60A

Part NumberIRFU1N60A
ManufacturerVishay / Siliconix
DescriptionMOSFET N-CH 600V 1.4A TO251AA
DatasheetsDownload IRFU1N60A Datasheet PDFPDF Icon
Price for IRFU1N60A

Specification of IRFU1N60A

Status
Obsolete
Package
Tube
Supplier
Vishay Siliconix
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
600 V
Current - Continuous Drain (Id) @ 25C
1.4A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
7Ohm @ 840mA, 10V
Vgs(th) (Max) @ Id
4V @ 250A
Gate Charge (Qg) (Max) @ Vgs
14 nC @ 10 V
Vgs (Max)
30V
Input Capacitance (Ciss) (Max) @ Vds
229 pF @ 25 V
FET Feature
-
Power Dissipation (Max)
36W (Tc)
Operating Temperature
-55C ~ 150C (TJ)
Mounting Type
Through Hole
Supplier Device Package
TO-251AA
Package / Case
TO-251-3 Short Leads, IPak, TO-251AA

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