IRFU320PBF

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Overview of IRFU320PBF

Part NumberIRFU320PBF
ManufacturerVishay / Siliconix
DescriptionMOSFET N-CH 400V 3.1A TO251AA
DatasheetsDownload IRFU320PBF Datasheet PDFPDF Icon
Price for IRFU320PBF

Specification of IRFU320PBF

Status
Active
Package
Tube
Supplier
Vishay Siliconix
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
400 V
Current - Continuous Drain (Id) @ 25C
3.1A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
1.8Ohm @ 1.9A, 10V
Vgs(th) (Max) @ Id
4V @ 250A
Gate Charge (Qg) (Max) @ Vgs
20 nC @ 10 V
Vgs (Max)
20V
Input Capacitance (Ciss) (Max) @ Vds
350 pF @ 25 V
FET Feature
-
Power Dissipation (Max)
2.5W (Ta), 42W (Tc)
Operating Temperature
-55C ~ 150C (TJ)
Mounting Type
Through Hole
Supplier Device Package
TO-251AA
Package / Case
TO-251-3 Short Leads, IPak, TO-251AA

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