ISC060N10NM6ATMA1

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Overview of ISC060N10NM6ATMA1

Part NumberISC060N10NM6ATMA1
ManufacturerInfineon Technologies
DescriptionTRENCH >=100V PG-TDSON-8
DatasheetsDownload ISC060N10NM6ATMA1 Datasheet PDFPDF Icon
Price for ISC060N10NM6ATMA1

Specification of ISC060N10NM6ATMA1

Status
Active
Series
OptiMOS™ 6
Package
Tape & Reel (TR),Cut Tape (CT),Digi-Reel®
Supplier
Infineon Technologies
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
100 V
Current - Continuous Drain (Id) @ 25C
15A (Ta), 97A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
8V, 10V
Rds On (Max) @ Id, Vgs
6mOhm @ 25A, 10V
Vgs(th) (Max) @ Id
3.3V @ 50A
Gate Charge (Qg) (Max) @ Vgs
33 nC @ 10 V
Vgs (Max)
20V
Input Capacitance (Ciss) (Max) @ Vds
2500 pF @ 50 V
FET Feature
-
Power Dissipation (Max)
3W (Ta), 125W (Tc)
Operating Temperature
-55C ~ 175C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
PG-TDSON-8 FL
Package / Case
8-PowerTDFN

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