ISL9N315AD3ST

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Overview of ISL9N315AD3ST

Part NumberISL9N315AD3ST
ManufacturerFairchild Semiconductor
DescriptionN-CHANNEL POWER MOSFET
DatasheetsDownload ISL9N315AD3ST Datasheet PDFPDF Icon
Price for ISL9N315AD3ST

Specification of ISL9N315AD3ST

Status
Active
Series
UltraFET®
Package
Bulk
Supplier
Rochester Electronics, LLC
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
30 V
Current - Continuous Drain (Id) @ 25C
30A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
4.5V, 10V
Rds On (Max) @ Id, Vgs
15mOhm @ 30A, 10V
Vgs(th) (Max) @ Id
3V @ 250A
Gate Charge (Qg) (Max) @ Vgs
28 nC @ 10 V
Vgs (Max)
20V
Input Capacitance (Ciss) (Max) @ Vds
900 pF @ 15 V
FET Feature
-
Power Dissipation (Max)
55W (Ta)
Operating Temperature
-55C ~ 175C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
TO-252-3 (DPAK)
Package / Case
TO-252-3, DPak (2 Leads + Tab), SC-63

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