ISS55EP06LMXTSA1

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Overview of ISS55EP06LMXTSA1

Part NumberISS55EP06LMXTSA1
ManufacturerInfineon Technologies
DescriptionMOSFET P-CH 60V 180MA SOT23-3
DatasheetsDownload ISS55EP06LMXTSA1 Datasheet PDFPDF Icon
Price for ISS55EP06LMXTSA1

Specification of ISS55EP06LMXTSA1

Status
Active
Series
OptiMOS™
Package
Tape & Reel (TR),Cut Tape (CT),Digi-Reel®
Supplier
Infineon Technologies
FET Type
P-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
60 V
Current - Continuous Drain (Id) @ 25C
180mA (Ta)
Drive Voltage (Max Rds On, Min Rds On)
4.5V, 10V
Rds On (Max) @ Id, Vgs
5.5Ohm @ 180mA, 10V
Vgs(th) (Max) @ Id
2V @ 11A
Gate Charge (Qg) (Max) @ Vgs
0.59 nC @ 10 V
Vgs (Max)
20V
Input Capacitance (Ciss) (Max) @ Vds
18 pF @ 30 V
FET Feature
-
Power Dissipation (Max)
400mW (Ta)
Operating Temperature
-55C ~ 150C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
PG-SOT23-3-5
Package / Case
TO-236-3, SC-59, SOT-23-3

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