IV1Q12160T4

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Overview of IV1Q12160T4

Part NumberIV1Q12160T4
ManufacturerInventchip
DescriptionSIC MOSFET, 1200V 160MOHM, TO-24
DatasheetsDownload IV1Q12160T4 Datasheet PDFPDF Icon
Price for IV1Q12160T4

Specification of IV1Q12160T4

Status
Active
Package
Tube
Supplier
Inventchip
FET Type
N-Channel
Technology
SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss)
1200 V
Current - Continuous Drain (Id) @ 25C
20A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
20V
Rds On (Max) @ Id, Vgs
195mOhm @ 10A, 20V
Vgs(th) (Max) @ Id
2.9V @ 1.9mA
Gate Charge (Qg) (Max) @ Vgs
43 nC @ 20 V
Vgs (Max)
+20V, -5V
Input Capacitance (Ciss) (Max) @ Vds
885 pF @ 800 V
FET Feature
-
Power Dissipation (Max)
138W (Tc)
Operating Temperature
-55C ~ 175C (TJ)
Mounting Type
Through Hole
Supplier Device Package
TO-247-4
Package / Case
TO-247-4

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