IXFA3N120

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Overview of IXFA3N120

Part NumberIXFA3N120
ManufacturerLittelfuse
DescriptionMOSFET N-CH 1200V 3A TO263
DatasheetsDownload IXFA3N120 Datasheet PDFPDF Icon
Price for IXFA3N120

Specification of IXFA3N120

Status
Active
Series
HiPerFET™
Package
Tube
Supplier
IXYS
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
1200 V
Current - Continuous Drain (Id) @ 25C
3A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
4.5Ohm @ 1.5A, 10V
Vgs(th) (Max) @ Id
5V @ 1.5mA
Gate Charge (Qg) (Max) @ Vgs
39 nC @ 10 V
Vgs (Max)
20V
Input Capacitance (Ciss) (Max) @ Vds
1050 pF @ 25 V
FET Feature
-
Power Dissipation (Max)
200W (Tc)
Operating Temperature
-55C ~ 150C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
TO-263AA (IXFA)
Package / Case
TO-263-3, DPak (2 Leads + Tab), TO-263AB

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