IXFB40N110P

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Overview of IXFB40N110P

Part NumberIXFB40N110P
ManufacturerLittelfuse
DescriptionMOSFET N-CH 1100V 40A PLUS264
DatasheetsDownload IXFB40N110P Datasheet PDFPDF Icon
Price for IXFB40N110P

Specification of IXFB40N110P

Status
Active
Series
HiPerFET™, Polar
Package
Tube
Supplier
IXYS
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
1100 V
Current - Continuous Drain (Id) @ 25C
40A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
260mOhm @ 20A, 10V
Vgs(th) (Max) @ Id
6.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs
310 nC @ 10 V
Vgs (Max)
30V
Input Capacitance (Ciss) (Max) @ Vds
19000 pF @ 25 V
FET Feature
-
Power Dissipation (Max)
1250W (Tc)
Operating Temperature
-55C ~ 150C (TJ)
Mounting Type
Through Hole
Supplier Device Package
PLUS264
Package / Case
TO-264-3, TO-264AA

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