IXFH26N65X2

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Overview of IXFH26N65X2

Part NumberIXFH26N65X2
ManufacturerLittelfuse
DescriptionIXFH26N65X2
Price for IXFH26N65X2

Specification of IXFH26N65X2

Status
Active
Series
HiPerFET™, Ultra X2
Package
Tube
Supplier
IXYS
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
650 V
Current - Continuous Drain (Id) @ 25C
26A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
130mOhm @ 500mA, 10V
Vgs(th) (Max) @ Id
5V @ 2.5mA
Gate Charge (Qg) (Max) @ Vgs
45 nC @ 10 V
Vgs (Max)
30V
Input Capacitance (Ciss) (Max) @ Vds
2450 pF @ 25 V
FET Feature
-
Power Dissipation (Max)
460W (Tc)
Operating Temperature
-55C ~ 150C (TJ)
Mounting Type
Through Hole
Supplier Device Package
TO-247 (IXFH)
Package / Case
TO-247-3

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