IXFH66N20Q

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Overview of IXFH66N20Q

Part NumberIXFH66N20Q
ManufacturerLittelfuse
DescriptionMOSFET N-CH 200V 66A TO247AD
DatasheetsDownload IXFH66N20Q Datasheet PDFPDF Icon
Price for IXFH66N20Q

Specification of IXFH66N20Q

Status
Obsolete
Series
HiPerFET™
Package
Tube
Supplier
IXYS
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
200 V
Current - Continuous Drain (Id) @ 25C
66A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
40mOhm @ 33A, 10V
Vgs(th) (Max) @ Id
4V @ 4mA
Gate Charge (Qg) (Max) @ Vgs
105 nC @ 10 V
Vgs (Max)
30V
Input Capacitance (Ciss) (Max) @ Vds
3700 pF @ 25 V
FET Feature
-
Power Dissipation (Max)
400W (Tc)
Operating Temperature
-55C ~ 150C (TJ)
Mounting Type
Through Hole
Supplier Device Package
TO-247AD (IXFH)
Package / Case
TO-247-3

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