IXFJ32N50Q

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Overview of IXFJ32N50Q

Part NumberIXFJ32N50Q
ManufacturerLittelfuse
DescriptionMOSFET N-CH 500V 32A TO268
DatasheetsDownload IXFJ32N50Q Datasheet PDFPDF Icon
Price for IXFJ32N50Q

Specification of IXFJ32N50Q

Status
Obsolete
Series
HiPerFET™
Package
Tube
Supplier
IXYS
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
500 V
Current - Continuous Drain (Id) @ 25C
32A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
150mOhm @ 16A, 10V
Vgs(th) (Max) @ Id
4V @ 4mA
Gate Charge (Qg) (Max) @ Vgs
153 nC @ 10 V
Vgs (Max)
20V
Input Capacitance (Ciss) (Max) @ Vds
3950 pF @ 25 V
FET Feature
-
Power Dissipation (Max)
360W (Tc)
Operating Temperature
-55C ~ 150C (TJ)
Mounting Type
Through Hole
Supplier Device Package
TO-268
Package / Case
TO-220-3, Short Tab

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