IXFK32N100Q3

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Overview of IXFK32N100Q3

Part NumberIXFK32N100Q3
ManufacturerLittelfuse
DescriptionMOSFET N-CH 1000V 32A TO264AA
DatasheetsDownload IXFK32N100Q3 Datasheet PDFPDF Icon
Price for IXFK32N100Q3

Specification of IXFK32N100Q3

Status
Active
Series
HiPerFET™, Q3 Class
Package
Tube
Supplier
IXYS
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
1000 V
Current - Continuous Drain (Id) @ 25C
32A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
320mOhm @ 16A, 10V
Vgs(th) (Max) @ Id
6.5V @ 8mA
Gate Charge (Qg) (Max) @ Vgs
195 nC @ 10 V
Vgs (Max)
30V
Input Capacitance (Ciss) (Max) @ Vds
9940 pF @ 25 V
FET Feature
-
Power Dissipation (Max)
1250W (Tc)
Operating Temperature
-55C ~ 150C (TJ)
Mounting Type
Through Hole
Supplier Device Package
TO-264AA (IXFK)
Package / Case
TO-264-3, TO-264AA

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