IXFN30N110P

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Overview of IXFN30N110P

Part NumberIXFN30N110P
ManufacturerLittelfuse
DescriptionMOSFET N-CH 1100V 25A SOT-227B
DatasheetsDownload IXFN30N110P Datasheet PDFPDF Icon
Price for IXFN30N110P

Specification of IXFN30N110P

Status
Active
Series
HiPerFET™, Polar
Package
Tube
Supplier
IXYS
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
1100 V
Current - Continuous Drain (Id) @ 25C
25A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
360mOhm @ 15A, 10V
Vgs(th) (Max) @ Id
6.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs
235 nC @ 10 V
Vgs (Max)
30V
Input Capacitance (Ciss) (Max) @ Vds
13600 pF @ 25 V
FET Feature
-
Power Dissipation (Max)
695W (Tc)
Operating Temperature
-55C ~ 150C (TJ)
Mounting Type
Chassis Mount
Supplier Device Package
SOT-227B
Package / Case
SOT-227-4, miniBLOC

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