IXFN90N170SK

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Overview of IXFN90N170SK

Part NumberIXFN90N170SK
ManufacturerLittelfuse
DescriptionSICFET N-CH 1700V 90A SOT227B
Price for IXFN90N170SK

Specification of IXFN90N170SK

Status
Active
Package
Tube
Supplier
IXYS
FET Type
N-Channel
Technology
SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss)
1700 V
Current - Continuous Drain (Id) @ 25C
90A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
20V
Rds On (Max) @ Id, Vgs
35mOhm @ 100A, 20V
Vgs(th) (Max) @ Id
4V @ 36mA
Gate Charge (Qg) (Max) @ Vgs
376 nC @ 20 V
Vgs (Max)
+20V, -5V
Input Capacitance (Ciss) (Max) @ Vds
7340 pF @ 1000 V
FET Feature
-
Power Dissipation (Max)
-
Operating Temperature
-40C ~ 150C (TJ)
Mounting Type
Chassis Mount
Supplier Device Package
SOT-227B
Package / Case
SOT-227-4, miniBLOC

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