IXFQ12N80P

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Overview of IXFQ12N80P

Part NumberIXFQ12N80P
ManufacturerLittelfuse
DescriptionMOSFET N-CH 800V 12A TO3P
DatasheetsDownload IXFQ12N80P Datasheet PDFPDF Icon
Price for IXFQ12N80P

Specification of IXFQ12N80P

Status
Active
Series
HiPerFET™, Polar
Package
Tube
Supplier
IXYS
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
800 V
Current - Continuous Drain (Id) @ 25C
12A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
850mOhm @ 500mA, 10V
Vgs(th) (Max) @ Id
5.5V @ 2.5mA
Gate Charge (Qg) (Max) @ Vgs
51 nC @ 10 V
Vgs (Max)
30V
Input Capacitance (Ciss) (Max) @ Vds
2800 pF @ 25 V
FET Feature
-
Power Dissipation (Max)
360W (Tc)
Operating Temperature
-55C ~ 150C (TJ)
Mounting Type
Through Hole
Supplier Device Package
TO-3P
Package / Case
TO-3P-3, SC-65-3

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