IXFR15N100Q3

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Overview of IXFR15N100Q3

Part NumberIXFR15N100Q3
ManufacturerLittelfuse
DescriptionMOSFET N-CH 1000V 10A ISOPLUS247
DatasheetsDownload IXFR15N100Q3 Datasheet PDFPDF Icon
Price for IXFR15N100Q3

Specification of IXFR15N100Q3

Status
Active
Series
HiPerFET™, Q3 Class
Package
Tube
Supplier
IXYS
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
1000 V
Current - Continuous Drain (Id) @ 25C
10A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
1.2Ohm @ 7.5A, 10V
Vgs(th) (Max) @ Id
6.5V @ 4mA
Gate Charge (Qg) (Max) @ Vgs
64 nC @ 10 V
Vgs (Max)
30V
Input Capacitance (Ciss) (Max) @ Vds
3250 pF @ 25 V
FET Feature
-
Power Dissipation (Max)
400W (Tc)
Operating Temperature
-55C ~ 150C (TJ)
Mounting Type
Through Hole
Supplier Device Package
ISOPLUS247
Package / Case
TO-247-3

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