IXFT28N50Q

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Overview of IXFT28N50Q

Part NumberIXFT28N50Q
ManufacturerLittelfuse
DescriptionMOSFET N-CH 500V 28A TO268
DatasheetsDownload IXFT28N50Q Datasheet PDFPDF Icon
Price for IXFT28N50Q

Specification of IXFT28N50Q

Status
Active
Series
HiPerFET™, Q Class
Package
Box
Supplier
IXYS
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
500 V
Current - Continuous Drain (Id) @ 25C
28A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
200mOhm @ 14A, 10V
Vgs(th) (Max) @ Id
4.5V @ 4mA
Gate Charge (Qg) (Max) @ Vgs
94 nC @ 10 V
Vgs (Max)
30V
Input Capacitance (Ciss) (Max) @ Vds
3000 pF @ 25 V
FET Feature
-
Power Dissipation (Max)
375W (Tc)
Operating Temperature
-55C ~ 150C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
TO-268AA
Package / Case
TO-268-3, DPak (2 Leads + Tab), TO-268AA

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