IXTA110N12T2

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Overview of IXTA110N12T2

Part NumberIXTA110N12T2
ManufacturerLittelfuse
DescriptionMOSFET N-CH 120V 110A TO263
DatasheetsDownload IXTA110N12T2 Datasheet PDFPDF Icon
Price for IXTA110N12T2

Specification of IXTA110N12T2

Status
Obsolete
Series
TrenchT2™
Package
Tube
Supplier
IXYS
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
120 V
Current - Continuous Drain (Id) @ 25C
110A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
14mOhm @ 55A, 10V
Vgs(th) (Max) @ Id
4.5V @ 250A
Gate Charge (Qg) (Max) @ Vgs
120 nC @ 10 V
Vgs (Max)
20V
Input Capacitance (Ciss) (Max) @ Vds
6570 pF @ 25 V
FET Feature
-
Power Dissipation (Max)
517W (Tc)
Operating Temperature
-55C ~ 175C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
TO-263AA
Package / Case
TO-263-3, DPak (2 Leads + Tab), TO-263AB

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