IXTA1N170DHV

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Overview of IXTA1N170DHV

Part NumberIXTA1N170DHV
ManufacturerLittelfuse
DescriptionMOSFET N-CH 1700V 1A TO263
DatasheetsDownload IXTA1N170DHV Datasheet PDFPDF Icon
Price for IXTA1N170DHV

Specification of IXTA1N170DHV

Status
Active
Series
Depletion
Package
Tube
Supplier
IXYS
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
1700 V
Current - Continuous Drain (Id) @ 25C
1A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
16Ohm @ 500mA, 0V
Vgs(th) (Max) @ Id
-
Gate Charge (Qg) (Max) @ Vgs
47 nC @ 5 V
Vgs (Max)
20V
Input Capacitance (Ciss) (Max) @ Vds
3090 pF @ 25 V
FET Feature
Depletion Mode
Power Dissipation (Max)
290W (Tc)
Operating Temperature
-55C ~ 150C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
TO-263HV
Package / Case
TO-263-3, DPak (2 Leads + Tab), TO-263AB

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