IXTF200N10T

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Overview of IXTF200N10T

Part NumberIXTF200N10T
ManufacturerLittelfuse
DescriptionMOSFET N-CH 100V 90A I4PAC
DatasheetsDownload IXTF200N10T Datasheet PDFPDF Icon
Price for IXTF200N10T

Specification of IXTF200N10T

Status
Active
Series
Trench
Package
Tube
Supplier
IXYS
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
100 V
Current - Continuous Drain (Id) @ 25C
90A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
7mOhm @ 50A, 10V
Vgs(th) (Max) @ Id
4.5V @ 250A
Gate Charge (Qg) (Max) @ Vgs
152 nC @ 10 V
Vgs (Max)
30V
Input Capacitance (Ciss) (Max) @ Vds
9400 pF @ 25 V
FET Feature
-
Power Dissipation (Max)
156W (Tc)
Operating Temperature
-55C ~ 175C (TJ)
Mounting Type
Through Hole
Supplier Device Package
ISOPLUS i4-PAC
Package / Case
i4-Pac-5

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