IXTH120N20X4

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Overview of IXTH120N20X4

Part NumberIXTH120N20X4
ManufacturerLittelfuse
DescriptionMOSFET
DatasheetsDownload IXTH120N20X4 Datasheet PDFPDF Icon
Price for IXTH120N20X4

Specification of IXTH120N20X4

Status
Active
Package
Tube
Supplier
IXYS
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
200 V
Current - Continuous Drain (Id) @ 25C
120A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
9.5mOhm @ 60A, 10V
Vgs(th) (Max) @ Id
4.5V @ 250A
Gate Charge (Qg) (Max) @ Vgs
108 nC @ 10 V
Vgs (Max)
20V
Input Capacitance (Ciss) (Max) @ Vds
6100 pF @ 25 V
FET Feature
-
Power Dissipation (Max)
417W (Tc)
Operating Temperature
-55C ~ 175C (TJ)
Mounting Type
Through Hole
Supplier Device Package
TO-247 (IXTH)
Package / Case
TO-247-3

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