IXTH2N170D2

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Overview of IXTH2N170D2

Part NumberIXTH2N170D2
ManufacturerLittelfuse
DescriptionMOSFET N-CH 1700V 2A TO247
DatasheetsDownload IXTH2N170D2 Datasheet PDFPDF Icon
Price for IXTH2N170D2

Specification of IXTH2N170D2

Status
Active
Series
Depletion
Package
Tube
Supplier
IXYS
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
1700 V
Current - Continuous Drain (Id) @ 25C
2A (Tj)
Drive Voltage (Max Rds On, Min Rds On)
0V
Rds On (Max) @ Id, Vgs
6.5Ohm @ 1A, 0V
Vgs(th) (Max) @ Id
-
Gate Charge (Qg) (Max) @ Vgs
110 nC @ 5 V
Vgs (Max)
20V
Input Capacitance (Ciss) (Max) @ Vds
3650 pF @ 10 V
FET Feature
Depletion Mode
Power Dissipation (Max)
568W (Tc)
Operating Temperature
-55C ~ 150C (TJ)
Mounting Type
Through Hole
Supplier Device Package
TO-247 (IXTH)
Package / Case
TO-247-3

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