IXTH64N65X

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Overview of IXTH64N65X

Part NumberIXTH64N65X
ManufacturerLittelfuse
DescriptionMOSFET N-CH 650V 64A TO247
DatasheetsDownload IXTH64N65X Datasheet PDFPDF Icon
Price for IXTH64N65X

Specification of IXTH64N65X

Status
Active
Series
Ultra X
Package
Tube
Supplier
IXYS
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
650 V
Current - Continuous Drain (Id) @ 25C
64A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
51mOhm @ 32A, 10V
Vgs(th) (Max) @ Id
5V @ 250A
Gate Charge (Qg) (Max) @ Vgs
143 nC @ 10 V
Vgs (Max)
30V
Input Capacitance (Ciss) (Max) @ Vds
5500 pF @ 25 V
FET Feature
-
Power Dissipation (Max)
890W (Tc)
Operating Temperature
-55C ~ 150C (TJ)
Mounting Type
Through Hole
Supplier Device Package
TO-247 (IXTH)
Package / Case
TO-247-3

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