IXTN210P10T

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Overview of IXTN210P10T

Part NumberIXTN210P10T
ManufacturerLittelfuse
DescriptionMOSFET P-CH 100V 210A SOT227B
DatasheetsDownload IXTN210P10T Datasheet PDFPDF Icon
Price for IXTN210P10T

Specification of IXTN210P10T

Status
Active
Series
TrenchP™
Package
Tube
Supplier
IXYS
FET Type
P-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
100 V
Current - Continuous Drain (Id) @ 25C
210A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
7.5mOhm @ 105A, 10V
Vgs(th) (Max) @ Id
4.5V @ 250A
Gate Charge (Qg) (Max) @ Vgs
740 nC @ 10 V
Vgs (Max)
15V
Input Capacitance (Ciss) (Max) @ Vds
69500 pF @ 25 V
FET Feature
-
Power Dissipation (Max)
830W (Tc)
Operating Temperature
-55C ~ 150C (TJ)
Mounting Type
Chassis Mount
Supplier Device Package
SOT-227B
Package / Case
SOT-227-4, miniBLOC

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