IXTP1N100P

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Overview of IXTP1N100P

Part NumberIXTP1N100P
ManufacturerLittelfuse
DescriptionMOSFET N-CH 1000V 1A TO220AB
DatasheetsDownload IXTP1N100P Datasheet PDFPDF Icon
Price for IXTP1N100P

Specification of IXTP1N100P

Status
Active
Series
Polar
Package
Tube
Supplier
IXYS
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
1000 V
Current - Continuous Drain (Id) @ 25C
1A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
15Ohm @ 500mA, 10V
Vgs(th) (Max) @ Id
4.5V @ 50A
Gate Charge (Qg) (Max) @ Vgs
15.5 nC @ 10 V
Vgs (Max)
20V
Input Capacitance (Ciss) (Max) @ Vds
331 pF @ 25 V
FET Feature
-
Power Dissipation (Max)
50W (Tc)
Operating Temperature
-55C ~ 150C (TJ)
Mounting Type
Through Hole
Supplier Device Package
TO-220-3
Package / Case
TO-220-3

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