JANHCE1N5809

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Overview of JANHCE1N5809

Part NumberJANHCE1N5809
ManufacturerMicrochip Technology
DescriptionDIODE GEN PURP 100V 3A DIE
Price for JANHCE1N5809

Specification of JANHCE1N5809

Status
Active
Package
Bulk
Supplier
Microchip Technology
Technology
Standard
Voltage - DC Reverse (Vr) (Max)
100 V
Current - Average Rectified (Io)
3A
Voltage - Forward (Vf) (Max) @ If
875 mV @ 4 A
Speed
Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr)
30 ns
Current - Reverse Leakage @ Vr
5 A @ 100 V
Capacitance @ Vr, F
60pF @ 10V, 1MHz
Mounting Type
Surface Mount
Package / Case
Die
Supplier Device Package
Die
Operating Temperature - Junction
-65C ~ 175C

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